elektronische bauelemente STT3808NE 6a , 20v , r ds(on) 20 m ? n-channel enhancement mode mos.fet 18-oct-2013 rev. a page 1 of 4 http://www.secosgmbh.com/ any changes of specification will not be informed i ndividually. rohs compliant product a suffix of -c specifies halogen and lead-free key features: low rds(on) trench technology low thermal impedance fast switching speed typical applications: battery powered instruments portable computing mobile phones fast switch gps units and media players package information package mpq leader size tsop-6 3k 7 inch absolute maximum ratings (t a =25c unless otherwise noted) parameter symbol ratings unit drain-source voltage v ds 20 v gate-source voltage v gs 8 v t a = 25 c 6 continuous drain current 1 t a = 100 c i d 3.6 a pulsed drain current 2 i dm 22 a continuous source current (diode conduction) 1 i s 1 a t a = 25 c 0.83 power dissipation 1 t a = 100 c p d 0.3 w operating junction and storage temperature range t j , t stg -55 ~ 150 c thermal resistance ratings t Q 10 sec 110 maximum junction to ambient 1 steady state r ja 150 c / w notes 1. surface mounted on 1 x 1 fr4 board. 2. pulse width limited by maximum junction temperat ure. millimeter millimeter ref. min. max. ref. min. max. a 2.70 3.10 g 0 0.10 b 2.60 3.00 h 0.60 ref. c 1.40 1.80 j 0.12 ref. d 1.10 max. k 0 10 e 1.90 ref. l 0.95 ref. f 0.30 0.50 tsop-6 b l f h c j d g k a e 1 2 3 4 5 6 esd protection diode 2kv g1 s2 g 2 d1 s2 d2
elektronische bauelemente STT3808NE 6a , 20v , r ds(on) 20 m ? n-channel enhancement mode mos.fet 18-oct-2013 rev. a page 2 of 4 http://www.secosgmbh.com/ any changes of specification will not be informed i ndividually. electrical characteristics parameter symbol min. typ. max. unit test conditions gate- source threshold voltage v gs(th) 0.4 - - v v ds =v gs , i d =250 a gate-body leakage i gss - - 10 na v ds =0, v gs = 8v - - 1 v ds =16v, v gs =0 v zero gate voltage drain current i dss - - 30 a v ds =16v, v gs =0 v, t j = 85 c on-state drain current i d(on) 10 - - a v ds =5v, v gs =4.5v - - 20 v gs =4.5v, i d =6a drain-source on-resistance r ds(on) - - 28 m v gs =2.5v, i d =5a forward transconductance g fs - 10 - s v ds =15v, i d =6a diode forward voltage v sd - 0.7 - v i s =1a, v gs =0v dynamic total gate charge q g - 13.5 - gate-source charge q gs - 0.9 - gate-drain charge q gd - 5.4 - nc v ds =10v, v gs =4.5v, i d =6a turn-on delay time t d(on) - 6 - rise time t r - 12 - turn-off delay time t d(off) - 65 - fall time t f - 35 - ns v dd =10v, v gen =4.5v, r gen =6 , r l =10 , i d =1a input capacitance c iss - 680 - output capacitance c oss - 144 - reverse transfer capacitance c rss - 137 - pf vds = 10 v, vgs = 0 v, f = 1 mhz notes 1. pulse test pw Q 300 s duty cycle Q 2%. 2. guaranteed by design, not subject to production testing.
elektronische bauelemente STT3808NE 6a , 20v , r ds(on) 20 m ? n-channel enhancement mode mos.fet 18-oct-2013 rev. a page 3 of 4 http://www.secosgmbh.com/ any changes of specification will not be informed i ndividually. typical electrical characteristics
elektronische bauelemente STT3808NE 6a , 20v , r ds(on) 20 m ? n-channel enhancement mode mos.fet 18-oct-2013 rev. a page 4 of 4 http://www.secosgmbh.com/ any changes of specification will not be informed i ndividually. typical electrical characteristics
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